IRFB4115PBF IRFB4115 TO-220 MOSFET N-Channel Power Transistor 150V 115A


N-channel MOSFET transistor that comes in TO220 package. This is a transistor used to amplify or switch electronic signals in inverters, UPS, rectification, high frequency switching sources among other applications.
The IRFB4115 is a N-Channel power MOSFET that is designed for high-performance applications. 4115 MOSFET has a drain-to-source voltage rating of 150V, a continuous drain current rating of 115A, and an on-resistance of 6.5mO. It is also a fast-switching MOSFET, with a switching time of 10ns.


TECHNICAL SPECIFICATIONS:


HEXFET Series
FET type
Channel N
MOSFET (metal oxide) technology
Current - continuous consumption (Id) at 25ºC 104 A (Tc)
Drain to source voltage (Vdss) 150 V
Pulse voltage (On Rds max, On Rds min) 10V
Rds On (max) @ Id, Vgs 11mOhm at 62A, 10V
Vgs(th) (max) at Id 5V at 250µA
Vgs (max.) ±20V
Power dissipation (Max.) 380W (Tc)
Working temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
TO-220AB Supplier Device Package
Gate charge (Qg) (max) at Vgs 120 nC @ 10 V
Input Capacitance (Ciss) (max) at Vds 5270 pF @ 50 V