BT40T60 BT40T60ANF IGBT TO-3P 600V 40A MOSFET IC Power transistor triode


The Insulated Gate Bipolar Transistor also called an IGBT for short, is something of a cross between a conventional Bipolar Junction Transistor, (BJT) and a Field Effect Transistor, (MOSFET) making it ideal as a semiconductor switching device.


BT40T60 40T60 4060 TO-3P 40T60 TO3P 40A 600V IGBT Transistor Power MOSFET 3 Pin Igbt Transistor


Using novel field stop IGBT technology, Fairchild’s field stop IGBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications where low conduction and switching losses are essential.


Features:
Manufacturer: Fairchild Semiconductor
Product Category: IGBT Transistors
RoHS: RoHS Compliant Details
Configuration: Single
Collector- Emitter Voltage VCEO Max: 600 V
Maximum Gate Emitter Voltage: +/- 20 V
Continuous Collector Current : 40 A
Continuous Collector Current at 25 C: 80 A
Mounting Style: Through Hole
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: – 55 C